Products

Ascatron Silicon Carbide (SiC) power semiconductor devices are based on our proprietary 3DSiC® technology for robust and reliable operation with minimal losses. We develop diodes and switches for a wide range of voltages and power ratings. High quality volume production is setup at an external automotive qualified 150mm SiC foundry.

The following 3DSiC® power devices are available for testing. Please contact our Sales:

Schottky diodes

Features

  • Low Schottky barrier height
  • No reverse recovery
  • Avalanche capability
  • Surge current capability

Advantages

  • Unipolar rectifier
  • High efficiency
  • Low switching losses
  • Ease of paralleling with thermal stability
Product ID
VRRM
(V)
IF
(A)
QC
(nC)
TJ,max
(°C)
Package
ASC3DA02012HD12002065175TO-247-2L
ASC3DA02017HD170020110175TO-247-2L
ASC3DA01512HT12001565225TO-254

PiN diodes

Features

  • 10kV blocking
  • Lowest on-state voltage
  • Epitaxial emitter
  • No bipolar degradation

Advantages

  • Fast switching
  • Low reverse recovery
  • Low losses
  • Avalanche capability
Product ID
VRRM
(kV)
IF
(A)
VF, 25°C
(V)
TJ,max
(°C)
Package
ASCPDA00210KF102.03.817515 kV

Custom products

Our 3DSiC® devices can be adapted to customer specific requirements. This include but is not limited to alternative current rating, voltage rating or surge current.
Ascatron is also open to develop new devices based on our 3DSiC® technology in close cooperation with the customer.