Products

Ascatron Silicon Carbide (SiC) power semiconductor devices are based on our proprietary 3DSiC® technology for reliable operation with minimal losses. We develop diodes and switches for wide range of voltages and power rating. High quality volume production is setup at external 150mm SiC foundry. Our product launch plan is ambitious for the coming years and we will offer wide range of packages as well as bare dies.

The following 3DSiC® power devices are available for testing:

Schottky diodes

Features

  • Low Schottky barrier height
  • No reverse recovery
  • Avalanche capability
  • Surge current capability

Advantages

  • Unipolar rectifier
  • High efficiency
  • Low switching losses
  • Ease of paralleling with thermal stability
Product ID
VRRM
(V)
IF
(A)
QC
(nC)
TJ,max
(°C)
Package
ASC3DA02012HD12002065175TO-247-2L
ASC3DA02017HD170020110175TO-247-2L
ASC3DA01512HT12001565225TO-254

PiN diodes

Features

  • 10kV blocking
  • Lowest on-state voltage
  • Epitaxial emitter

Advantages

  • Fast switching
  • Low reverse recovery
  • Low losses
Product ID
VRRM
(kV)
IF
(A)
VF, 25°C
(V)
TJ,max
(°C)
Package
ASCPDA00210KF102.03.817515 kV

Custom products

Our 3DSiC® devices can be adapted to specific requirements of the customer. This can include alternative packaging solution or current rating.
Ascatron is also open to develop new devices based on our 3DSiC® technology in close cooperation with the customer.