Ascatron offer advanced Silicon Carbide (SiC) epitaxy material and custom specific device fabrication. We provide prototyping and small volume production.
SiC Epitaxy Material
Ascatron produces SiC epi material up to 150 mm with best in class uniformity. We offer a complete SiC material solution with flexible specifications.
- Thick epilayers With or without buffer, low doped layers up to 250µm
- Multi-layer structures Various doping levels, including pn-junctions
- In process epitaxy Embedded & buried structures, contact layers
SiC Device Fabrication
A custom specific fabrication process is prepared by combining and adjusting Ascatron standard process modules according to the customer’s design.
- Complete process line. Prototype fabrication, pilot production
- Full process control. Traceability, standard unit process modules
- Wafer level testing. Measurement and analyzing, documentation