Our Offer

The Ascatron SiC foundry production is based on well established unit process modules and 20 years experience from SiC technology development.  A custom specific fabrication process is designed by combining and adjusting the process modules according to the customer’s specific device design. In many cases Ascatron also contributes with unique process technology and design solutions to improve the device perfor­mance further. The complete integration process is verified and evaluated in close cooperation with the customer. This enables a cost efficient realization of the manufacturing process.

SiC Epitaxy Material for demanding device design

  • Low doped epilayers With or without buffer, Thick layers up to180µm
  • Epilayer structures Various doping levels,  including pn-junctions
  • In process epitaxy Embedded & buried structures, Contact layers

SiC Device Fabrication for fast chip delivery

  • Complete process line Prototype fabrication, Pilot production, Capacity to move to medium size volumes
  • Full process control Traceability,  Standard unit process modules, Short turn-around for evaluation batches
  • Wafer level testing Measurement and analyzing, Documentation

Fabrication Resources

Ascatron SiC epi and device foundry service is located at the Electrum Laboratory outside Stockholm. The clean-room has a total area of 1300 m2 and provides the access to all equip¬ment needed for processing of 100 mm diameter wafers. For SiC epitaxy we operate our own single wafer reactors and are in the process to invest in a multi-wafer reactor to increase our production capacity. For ion implantation we have a close cooperation with the Ion Technology Center at the Ångström laboratory in Uppsala and we use a dedicated high temperature furnace at the Electrum laboratory for the post implantation anneal.

150 mm SiC wafer Fab

  • Epitaxy – 3 hot-wall SiC CVD reactors
  • Lithography – 0.5 µm stepper
  • Dielectrics – Thermal, LTO, PECVD, ALD
  • Implantation – Al, B, N, P – 650 keV
  • Metals – Ti, TiW, Al, Au, Pt, Ni, & silicides
  • Anneal – RTA, high temp furnace (1900°C)
  • Etching – ICP, RIE
  • Post Process – dicing & wire bonding
  • Metrology & Electrical characterisation