Ascatron has developed a unique material technology (3DSiC®) that makes it possible to fully use the potential of Silicon Carbide (SiC) to handle very high power with minimal losses, while maintaining the reliability on same level as for Silicon devices. A buried doped grid sustains high voltage and reduces the electric field at the sensitive surface of the device. Our 3DSiC® technology makes it possible to lower the losses up to 30% compared to conventional solutions. This is achieved with lower Schottky barrier, higher mobility of MOSFET, efficient integration and less need for downgrading to maintain reliability requirements.

Comparison of performance for different types of power semiconductors.

The 3DSiC® technology bring competitive advantages for power diodes and switches in relation to conventional SiC devices:

  • Robustness & performance – Superior device performance characteristics, e.g. low threshold voltage, surge current and avalanche capabilities.
  • Low unit cost – Reduced power dissipation allow up to 30% higher current density and correspondingly smaller chip size.
  • Streamlined production – The manufacturing process can be used for a broad voltage range from 600 V to +10 kV and across different SiC device types allowing efficient production and customized device specifications.

3DSiC® technology with buried doped grid to protect sensitive surface of chip from high electric field.

The 3DSiC® technology enables a modular design. Each device is divided into a high voltage part related to the desired voltage class, and a low voltage part for each type of component. It allows for various combinations to enable a wide range of products. Development time is shortened, qualification process simplified, and production can be streamlined.