Ascatron provides high performance Silicon Carbide (SiC) power semiconductors radically reducing losses in electrical power converters for applications in industry, renewable energy and electrical vehicles. We use our proprietary 3DSiC® technology to make the most efficient and robust SiC power devices.
Ascatron is a Sweden based scale-up company with a background in producing aadvanced SiC epitaxy material for global customers since 2011.
Ascatron office and clean-room in the Electrum building in Stockholm, Sweden.
Vision, Mission & Business target
Ascatron vision is to provide the full power of SiC for maximum performance and sustainable use of electricity.
Our mission is to develop medium and high voltage power semiconductor products with minimal losses & reliable operation based on advanced SiC material technology.
Ascatron business target is to be a highly trusted and innovative supplier of SiC semiconductor chip for power electronic applications in industry, automotive and energy.
Ascatron business model is semi-fabless where we design the power device and have in-house production of the 3DSiC® epitaxy material on commercial SiC substrates, while chip fabrication is outsourced. Target customers are power discrete and module suppliers with own packaging capacity.
Ascatron device development and SiC epi production is located at the Electrum Laboratory outside Stockholm. The clean-room has a total area of 1300 m2 and provides the access to all equipment needed for processing of 100 mm and 150 mm diameter wafers. Ascatron invest in design tools and own equipment for SiC epitaxy material manufacturing and device testing.
2020 – Acquired by II-VI Incorporated to build vertically integrated 150 mm SiC technology platform
2019 – Establish 3DSiC® MOSFET design at automotive qualified foundry for volume production
2018 – Sales of Ascatron shares in JV company BASiC.
Establish manufacturing process for 3DSiC® JBS diode at automotive qualified SiC foundry.
2017 – Benchmark competitive performance of 1200V & 1700V 3DSiC® JBS diode. Demonstrate 10kV 3DSiC® PiN diode for industrial application of customer. Setup JV sales company Shenzhen BASiC in China with 2 M€ separate funding.
2016 – Finalize A-round financing with Italian and Chinese VC. Demonstrate best-in class SiC epi material on 150mm substrates. 30+ global customers.
2015 – InnoEnergy innovation funding for scale-up of 3DSiC® material technology. Co-operation with epi equipment producer LPE.
2014 – Demonstrate first 3DSiC® JBS diode for 250C high temp operation.
2013 – Grant from Vinnova, Eurostars and EU for development of epi and device technology.
2012 – Deliver epi material without bipolar degradation for BJT to Fairchild (now On Semi).
2011 – Spin-out from Swedish research center Acreo after 20 years of R&D in SiC for ABB, Denso and Hoya.
Reference research projects
|Mobile Xray||BBG / Energimyndigheten|
|KTH (SE), SFT (SE)|
|SICTAA||EUREKA / Vinnova|
|Rolls-Royce (UK), Semelab (UK), Durham U (UK), Catapult (UK)|
|PressPack||BBG / Energimyndigheten|
|RISE Acreo (SE)|
|CHALLENGE||EU H2020 |
|STM (IT), LPE (IT), IMM (IT),
Milano-B U (IT), LiU (SE)
|GE (SE), RISE Acreo (SE), KTH (SE),
|3DSiC||KICinnoenergy / EIT |
|LPE (IT), Acreo(SE), GE (SE)|
|OSIRIS||ECSEL / H2020 / Vinnova |
|III/V lab (FR), Norstel(SE),
|SPEED||EU FP7 |
|ABB (CH), Norstel(SE), CNM (ES),
Infineon(DE AS), Fraunhofer(DE)
|PiN||SiC Power C / Vinnova |
|GE (SE), Acreo (SE)|
|STMicro (FR), Airbus (FR),
|BESIDES||Eurostars / Vinnova |
|High Temp Diode||Vinnova |