Ascatron provides next generation Silicon Carbide (SiC) power semiconductors using our proprietary 3DSiC® technology with a quality and performance unattainable through current methods. SiC radically reduces losses in electrical power converters and lowers system costs, making it key for electric vehicles and renewable energy as well as many other applications. By developing the most reliable and efficient SiC devices we want to contribute to a sustainable use of electric energy.
Ascatron focuses on the supply of bare SiC dies for power modules and discrete components. In addition to the general advantages of SiC, Ascatron’s 3DSiC® technology enables up to 30% lower power dissipation, higher current density and improved robustness. Our first 3DSiC® products are Schottky and PiN diodes. 3DSiC® MOSFET switches are in development. We also offer our 3DSiC® device chip adapted to specific requirements and development of new devices based on 3DSiC® technology.
Ascatron produces its own SiC epitaxy material with state-of-the-art thickness and doping homogeneity for a wide range of specifications. This includes thick epi for high voltage devices, multilayer structures and thin regrowth layers. Ascatron also provides its industry proven SiC epitaxy services to customers.